Ferromagnetic behavior of GaN doped with Mn (Ga1−zMnzN) grown by the ammonothermal and chemical transport methods is discussed in terms of a second phase (ferromagnetic one) produced during the growth process. The reference manganese nitride samples grown by the same method as (Ga,Mn)N reveal room-temperature ferromagnetic behavior, depending on the growth details. Different MnxNy phases are suggested to be responsible for ferromagnetic behavior of (Ga,Mn)N.
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Zając et al. (2003) studied this question.
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