In this work, we study the electronic and chemical properties of a graphene sheet doped with S or P, by means of ab initio calculations.We consider one, two and three impurity atoms by substitution on the graphene and obtain doping formation energies of 5.78, 7.43 and 10.53 eV for sulphur impurities and 2.73, 0.54 and 1.82 eV for phosphorous impurities.We find that doping induces a
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García‐García et al. (2008) studied this question.
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