Modeling of Ti:LiNbO/sub 3/ waveguide devices. II. S-shaped channel waveguide bends

For pt.I see ibid., vol.7, no.3, p.533-9, 1989. Directly from design and fabrication parameters, the performances of S-shaped channel waveguide bends are calculated by using the same formalism described in Part I. The calculated insertion losses of S-shaped waveguide bends are in agreement with all experimental data found in the literature. Different S-curves for short-length low-loss waveguide bend design were also studied. Results show that the widely used sine-generated S-curve does not provide lower insertion loss than other S-curves.>