Highly Stable Perovskite Photodetector Based on Vapor-Processed Micrometer-Scale CsPbBr₃ Microplatelets

Recently, halide perovskites have attracted tremendous attention because of their great abilities in large-scale and cost-effective manufacturing of optoelectronic devices. Here, a novel photodetector configuration was proposed by employing vapor-processed micrometer-scale inorganic CsPbBr 3 microplatelets as the light absorber. Temperature-dependent steady-state and time-resolved photoluminescence spectra were first recorded to study the emission mechanisms and carrier recombination dynamics of the CsPbBr 3 microplatelets. Furthermore, a photoconductive detector was prepared, and the device exhibits good performances with a high on/off photocurrent ratio of 4.6 × 10 3, a responsivity of ∼1.33 A/W, and a specific detectivity of 0.86 × 10 12 jones. Additionally, temperature-dependent current–voltage and current–time characteristics of the photodetector were studied to assess the thermal effects on its photodetection ability. In particular, the unencapsulated photodetector demonstrates a prominent stability over the long-term temperature endurance measure in ambient air. Even operated at 373 K, the photodetector can operate properly, showing a high temperature resistance. Moreover, the device performance can almost be retained even with a 7 month storage in air. The experimental results suggest that the CsPbBr 3 microplatelets can serve as a good candidate for the fabrication of high-performance photodetectors compatible with practical applications.