Generic Approach to Boost the Sensitivity of Metal Oxide Sensors by Decoupling the Surface Charge Exchange and Resistance Reading Process

As one of the bottleneck parameters for practical applications of metal oxide semiconductor-based gas sensors, sensitivity enhancement has attracted significant attention in the past few decades. In this work, alternative to conventional strategies for designing sensitive surfaces via morphology/defect/heterojunction control (then operating at an optimized isothermal temperature with a maximal response), a facile enhancement approach by decoupling surface charge exchange and resistance reading process (possessing different temperature-dependent behaviors) through pulsed temperature modulation (PTM) is reported. Substantially magnifying electrical responses of a generic metal oxide (e.g., WO 3 ) micro-electromechanical systems sensor toward diverse analyte molecules are demonstrated. Under the optimal PTM condition, the response toward 10 ppm NO 2 can be boosted from (isothermal) 99.7 to 842.7, and the response toward 100 ppm acetone is increased from (isothermal) 2.7 to 425, which are comparable to or even better than most of the state-of-the-art WO 3 -based sensors. In comparison to conventional (isothermal) operation, PTM allows to sequentially manipulate the physisorption/chemisorption of analyte molecules, generation of surface reactive oxygen species, and sensor resistance reading and thus provides additional opportunities in boosting the electrical response of oxide sensors for advanced health and/or environment monitoring in future.