Reactive ion etching of III-V compounds using C ₂ H ₆ /H ₂

Reactive ion etching of InP, GaInAs and GaAs using a mixture of ethane and hydrogen, C2H6/H2, is demonstrated for the first time. It has been found that by choosing optimum etching parameters we can obtain excellent vertical sidewalls as well as very smooth surfaces, keeping the etching rate at a convenient value of 20–60 nm/min.