Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

The current–voltage characteristics of graphene/Si-nanowire (SiNW) arrays/n-type Si Schottky diodes with and without H2O2 treatment were measured in the temperature range of −150 ∼ 150 °C. The forward-bias current-voltage characteristics were analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decreased temperatures. Such behavior is attributed to barrier inhomogeneities. It is shown that both Schottky barrier inhomogeneity and the T0 effect are affected by H2O2 treatment, implying that charge traps in the SiNWs have a noticeable effect on Schottky barrier inhomogeneity for graphene/SiNWs/n-type Si diodes.