An InGaAsP/InP superluminescent diode (SLD) emitting at 1.54 μm has been fabricated. The device uses a buried crescent structure on a p-InP substrate. The parameters were optimized for high output power, small spectral modulation, and smooth far-field operation. The coherence function of the SLD emission was studied systematically. An output power of 5 mW, a coherence length of 41 μm, and a second coherence peak suppression ratio of 22 dB were obtained.
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Chen et al. (1990) studied this question.