Enhancement of Al positive secondary ion emission by ambient oxygen was investigated by Ga + focused ion beam (FIB) SIMS instrument at various combinations of oxygen partial pressure and scanning area of FIB. A model calculation was made which assumes that the amount of enhancement of single‐charged positive secondary ion emission is directly proportional to the oxygen concentration in the mixing layer. The observed amount of enhancement showed a characteristic dependence both on the oxygen dose and the beam scanning area. The model calculation well reproduced most of the features quantitatively.
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Sakamoto et al. (1994) studied this question.
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