Review analyzes strategies to enhance performance of quantum dot light-emitting diodes through hole-injection layer optimization, suggesting future research directions.
, metal-ion doping and organic-inorganic hybridization). Studies have demonstrated that dual HILs reduce the hole-injection barrier through stepped energy levels, doping strategies enhance the carrier mobility and interfacial stability, and metal oxide HILs exhibit superior thermal stability and environmental adaptability. Additionally, post-treatment processes such as rapid thermal annealing (RTA) can further optimize the interfacial properties. Although QLEDs possess immense potential in display and lighting applications, challenges remain in addressing the insufficient efficiency of cadmium-free blue QLEDs and the interfacial strain mismatch in flexible devices. This review provides a comprehensive reference for the rational design of HILs and outlines future directions for developing high-efficiency, stable, and scalable QLEDs.
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Meng et al. (2025) studied this question.
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