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We have carried out real-time Raman measurements on GaAs crystals under 5-keV He⁺ irradiation and investigated the lattice disordering. The phonon correlation length has been obtained from the change in the Raman spectral line shape of the longitudinal-optical phonon. The phonon correlation length decreases as the ion fluence increases. It is shown that the phonon correlation length corresponds to the mean distance between the defects in ion-irradiated GaAs.
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Ishioka et al. (1995) studied this question.
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