We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.
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Cappellini et al. (1993) studied this question.
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