MoS 2 /CdS p-n heterojunction films with high photoelectrochemical activity for H 2 evolution under visible light were successfully prepared by electrodeposition followed by chemical bath deposition. The films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible absorption, X-ray photoemission spectroscopy, photoluminescence, and photoelectrochemical response. The MoS 2 /CdS heterostructure shows much higher visible-light photoelectrocatalytic activity and higher stability toward the water splitting than pure CdS film. The MoS 2 /CdS film with an optimal ratio of 0.14% exhibits the highest photocurrent of 28 mA/cm 2 and the highest IPCE of ca. 28% at 420 nm at 0 V vs Ag/AgCl. The critical role of MoS 2 in the MoS 2 /CdS film was investigated. The improved photoelectrochemical performance of the MoS 2 /CdS heterojunction film was attributed to the visible light absorption enhanced by MoS 2 and the formation of a p-n junction between CdS and MoS 2, which accelerates the effective separation of photogenerated carriers by the internal electrostatic field in the junction region.
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