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Hydrogen-induced ferroelectric degradation of Pb(Zr,Ti)O 3 (PZT) films was studied by measuring the hysteresis curves after hydrogen annealing at various temperatures and times. It was found that hydrogen annealing at temperatures below 100°C resulted in an increase of remanent polarization due to the accumulation of hydrogen ions at the Pt/PZT interface. After hydrogen annealing at 400°C, the ferroelectric characteristics of the Pt/PZT/Pt capacitor deteriorated very rapidly. However, when a thin (50 Å) layer of Pb was deposited on top of the Pt electrode, it was found that the hydrogen-induced ferroelectric degradation was significantly retarded at 400°C. It is presumed that the kinetic path for producing highly reducing hydrogen ions by dissociative adsorption of hydrogen on Pt electrode surfaces was effectively blocked by the poisoning effect of Pb.
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Yuh et al. (2002) studied this question.
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