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Applying a magnetic field in Voigt geometry enables the direct observation of dark excitons on (Zn, Cd)Se/ZnSe quantum well structures. We deduce a zero-field electron–hole exchange splitting of 0.51 meV. The enhancement with respect to bulk ZnSe is 2.1. Simultaneous observation of a Raman spin flip process yields a g-factor of 1.09 ± 0.03 for the neutral donor electron, being very close to ge = 1.10 ± 0.03 deduced for the electron in the exciton.
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Puls et al. (1997) studied this question.
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