We performed various pulse measurements on an atomic layer deposited (ALD) HfO 2 -based resistive switching random access memory (RRAM) device and investigated its electronic synaptic characteristics. Unlike requirements for RRAM device application, to achieve the multi-state conductance changes required for the synaptic device, we employed additional sputtered TaO x thin film formation on the ALD HfO 2 switching medium, which leads to engineering the concentration of oxygen vacancies and modulating the conductive filaments. With this TaO x /HfO 2 bi-layered device, we attained gradual resistive switching, linear and symmetric conductance change, improved endurance and reproducibility characteristics compared to a single HfO 2 device. Finally, we emulated spike-timing-dependent plasticity based learning rule with pulses inspired by neural action potential, indicating its potential as an electronic synaptic device in a hardware neuromorphic system.
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Kim et al. (2018) studied this question.
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