35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

P-type metal oxide semiconductor field-effect transistors with PtSi Schottky sources/drains with a 35-nm long metal gate were fabricated on a separation by implanted oxygen substrate by electron-beam lithography and a self-aligned silicide process. The drain current was -176 µA/µm and the transconductance was 390 mS/mm at V DS = V GS = -1.5 V. For these devices, comparable drivability to conventional metal oxide semiconductor field-effect transistors was achieved. The on/off ratio was improved using a very thin silicon-on-insulator structure.