Defects and other imperfections in photo-induced chemical vapor deposition (photo-CVD) SiO 2 films have been characterized by photoluminescence excited by ArF and F 2 excimer lasers. Photoluminescence peaks have been observed at around 2.7, 3.5 and 4.4 eV and are characteristic of both the deposition temperatures of photo-CVD and excitation energy. The intensity of the photoluminescence peak at around 2.7 eV initially increases with ArF excimer laser irradiation but decreases after about 2000 shots. On the other hand, it decreases monotonously with F 2 excimer laser irradiation. The origins of these peaks have been discussed in terms of various dependences of photoluminescence and absorption spectra.
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Kanashima et al. (1993) studied this question.
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