Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.
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Rao et al. (1989) studied this question.
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