A study of the effect of zinc diffusion into beryllium- and silicon-doped GaAs/Ga0.7Al0.3As structures has been carried out. The beryllium dopant was found to diffuse very rapidly as a result of the presence of diffusing zinc, while the silicon remained unaffected. A mechanism is proposed whereby competition for the gallium sites causes the beryllium to move interstitially wherever zinc is present.
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Houston et al. (1988) studied this question.
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