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A novel etching technique for the 1.5-μm GaInAs/AlGaInAs buried heterostructure quantum-well laser diode is developed. Tartaric acid is used for the etching of GaInAs and AlGaInAs layers for the first time. Using a three-step material-selective etching, a 3-μm-high mesa with about 1.5-μm-wide active layer and 3-μm-wide contact layer can be achieved with good reproducibility. Nearly flat surfaces were obtained after a two-step organometallic chemical vapor deposition growth. A low threshold current of 11 mA was obtained for a 570-μm-long cavity device.
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Kasukawa et al. (1991) studied this question.
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