High-concentration modulation doping of beryllium (Be) for GaInAs/InP quantum wells (QWs) was achieved by chemical beam epitaxy (CBE) up to 1×10 19 cm -3 . The modulation-doped quantum well (MD-QW) structure showed strong photoluminescence intensity. Broad-contact separate-confinement-heterostructure (SCH) QW lasers were also fabricated to evaluate the quality of MD-QWs. The measured threshold current density was 1.5-2.0 kA/cm 2 for devices with 200 µm width and 200-1000 µm cavity length. High concentration and modulation doping for GaInAs/InP lasers was demonstrated.
No takes yet. Share an insight, caveat, or question.
Uchida et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: