Amorphous silicon dioxide (a-SiO 2 ) films prepared with thermal oxidation of silicon substrates are studied using photoluminescence. Two luminescence bands at 4.2 eV (290 nm) and 2.14 eV (582 nm) are observed in a-SiO 2 film. Peak positions of both the photoluminescence and photoluminescence bands are the same as for the B 2 α band in bulk silica.
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Awazu et al. (1993) studied this question.
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