. Real-time monitoring and near-ambient pressure measurement with different excitation sources has been used to identify the mechanisms behind the observed changes in spectral parameters that are different for each of the three materials. Corrected binding energy values aid the completion of the energy band diagrams for these wide-gap semiconductors and provide protocols for surface processing to engineer key surface and interface parameters.
No takes yet. Share an insight, caveat, or question.
Astley et al. (2022) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: