Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators

Efficient photodetectors (PDs) and lasers are critical components in silicon photonics technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) silicon-on-insulators. The nano-scale PDs exhibit a high photoresponsivity of 1.06 A/W at 1.55 µm, and a wide operating range from 1450 nm to 1650 nm. The bufferless feature of nano-PDs facilitates effective interfacing with Si waveguides, thus paving the path toward fully integrated silicon photonics circuits.