The Schottky barrier height of W on p-type Si1−xGex/Si has been investigated as a function of composition (10%≤x≤33%) and Si1−xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.
No takes yet. Share an insight, caveat, or question.
Aubry et al. (1993) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: