Examination of experimental results reveals a correlation between the free-surface band-bending and the value of the metal-semiconductor barrier extrapolated to zero electronegativity. Further, in materials with relatively high surface-state densities, the free-surface Fermi level Esf shows only a small variation for a range of semiconductors. It is proposed that this pinning is associated with the electronegativity of the anion. Formulas are presented for the prediction of barrier heights on a wide range of compound semiconductor alloys.
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Morgan et al. (1981) studied this question.
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