Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in

We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion-beam mixing with Si ions and low-temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal-oxide-semiconductor field-effect transistor in a self-aligned fashion and can have a significant impact on complementary metal-oxide-semiconductor devices.