Low-pressure CVD-grown β-Ga₂O₃bevel-field-plated Schottky barrier diodes

We report (010)-oriented β-Ga 2 O 3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O 2 and SiCl 4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of −190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic R ON of 3.9 mΩ·cm 2 and extracted intrinsic R ON of 0.023 mΩ·cm 2 . The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga 2 O 3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga 2 O 3 technology.