Infrared absorption (IR) spectra corresponding to stretching modes of Si-H bondings in hydrogenated Si microcrystalline (µc-Si:H) film with such structures as SiH, SiH 2 , SiH 3 and (–SiH m )– n [chain-like] were studied in detail by taking the second derivative modes. Two absorption peaks due to SiH on Si(111) and Si(110) surfaces of the microcrystalline grains in the film, respectively, near 2100 cm -1 were clarified and the presence of both the symmetric and asymmetric modes of stretching in SiH 2 on Si(100) and SiH 3 on Si(111) and Si(110) surfaces was assigned successfully.
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Satoh et al. (1985) studied this question.
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