Doping and electrically driven insulator–metal transitions in V₂O₃

Based on DFT+DMFT calculations, we outline a mechanism for orbital-selective insulator-to-metal transitions in paramagnetic V ₂ 2 O ₃ 3 , showing how they can be triggered upon electron/hole doping or under the application external electric fields, the latter inducing a charge density wave ordering. These realistic situations are shown to have profound effects on orbital switchings and current–voltage characteristic curves due to the close proximity of V ₂ 2 O ₃ 3 memristor to Mott transitions.