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The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
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Shaw et al. (1993) studied this question.
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