Characterizations of undoped and Cu doped CdS thin films using photothermal and other techniques

Photothermal Deflection Spectroscopy (PDS) technique was used to study undoped and copper (Cu) doped cadmium sulphide (CdS) thin films. Variation in grain size and lattice strain due to Cu doping were analysed using X‐ray diffraction (XRD). Changes in mobility of carriers in CdS with Cu concentration was studied using PDS technique for the first time and results are compared with the earlier ones. Thickness of Cu diffused region in CdS was also calculated and compared with results from X‐Ray Photoelectron Spectroscopy (XPS) and Ellipsometry. Results from PDS technique are found to be agreeing with those from other experiments. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)