Degradation of micron-sized CrSi2 lines on polycrystalline silicon

The thermal stability of CrSi2 fine lines on undoped chemical vapor deposited polycrystalline silicon was investigated. Heat treatments were in vacuum at temperatures between 500 and 950 °C. Hillock growth resulting from dissolution of silicon and subsequent regrowth in the silicide resulted in degradation at temperatures as low as 650 °C. We found that the degradation occurs preferentially at line edges. It is suggested that the edge preference is due to silicide deformation that is required at recrystallization sites.