It is observed that narrow stripe graded barrier single quantum well lasers are relatively high threshold current devices ( > 50 mA), even though made from wafers with extremely low broad area threshold current density (2). Besides, they show a complex time-dependent lasing behavior with sequential lasing from then = 2andn = 1quantum levels. It is shown here that these properties are inherent to narrow stripe gain-guided SQW lasers and are dictated by the nature of the optical gain curve of the quantum well.
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Patel et al. (1987) studied this question.
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