Space-Charge Effect in Unintentionally N-Doped Silicon

We report experimental results on current–voltage characteristics of Au-Ti/n-Si/Au-Ti devices made on unintentionally n-doped silicon, which depend dramatically on temperature and external magnetic field. While such devices show Ohmic behavior in the temperature range 154–300 K, space-charge effect dominates at high bias voltages in the temperature range 77–154 K. In the later case, external magnetic field may increase its breakdown voltage, thus inducing large positive magnetoresistance similar to those reported by other groups.