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A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm 2 and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.
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Chen et al. (2009) studied this question.
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