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The electric-field-induced resistance switching in polycrystalline tungsten oxide films was investigated. Compared with the as-deposited film, the film annealed in an oxygen atmosphere shows a more stable switching behavior, a higher low-to-high resistance ratio, and a better endurance and retention. Based on the x-ray photoemission spectroscopy analysis, the resistance switching was attributed to the change in the interfacial barrier potential, due to the electron trapping/detrapping in the surface states, and the switching improvement was attributed to the decrease in the surface density of states. The present work suggests a possible approach controlling the resistance switching property by surface modification.
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Shang et al. (2010) studied this question.
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