Bi Fe O 3 thin films free of secondary phases were obtained by the soft chemical solution on Pt(111)∕Ti∕SiO2∕Si substrates after annealing at 500°C for 2h. The film grown in the (100) direction presented a remanent polarization Pr of 31μC∕cm2 at room temperature. Electrical measurements using both quasistatic hysteresis and pulsed polarization confirm the existence of ferroelectricity with a switched polarization of 60–70μC∕cm2, ΔP=(P*−P̂). Low leakage conduction and an out-of-plane piezoelectric (d3) coefficient of 40pm∕V were obtained by the improvement of preparation technology.
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González et al. (2007) studied this question.
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