Temperature dependence of the electrical and electromechanical properties of lead zirconate titanate thin films

The temperature dependence of the electrical and electromechanical properties of Pb(Zr,Ti)O3 (PZT) (Zr/Ti=30/70, 52/48, and 70/30) thin films are investigated. The 1-μm-thick PZT thin films were prepared on (111)Pt/Ti/SiO2/Si substrates by chemical solution deposition. The temperature dependence of the dielectric and ferroelectric properties of the films were measured in the temperature range from −250 to 150 °C. The temperature-dependent strain loops from PZT films were measured using scanning probe microscopy in the temperature range from −100 to 150 °C. The field-induced displacement increased with increase of the temperature; however, their temperature dependence was relatively small, compared with that reported for bulk PZT ceramics. The results indicate that a thermally activated extrinsic ferroelastic contribution is not predominant in thin PZT films.