The influence of an interfacial oxide layer on the solar cell behaviour of Au/n-GaAs Schottky barriers is investigated. It is found that the efficiency shows a maximum as a function of the oxide layer thickness. This effect is caused by the dependence of the Schottky barrier height on the interfacial layer thickness. A model, accounting for this is proposed, based upon the presence of charges in the oxide layer. Additional evidence for the proposed model is added.
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Meirhaeghe et al. (1980) studied this question.
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