We report direct measurements of carrier trapping from three-dimensional states into spatially confined one-dimensional states in GaAs quantum wires. In spite of the small wire volume, very fast trapping ({≤}10 ps) is observed in V-groove wires. Theoretical calculations of trapping via optical-phonon emission, based on an accurate band-structure determination, shows that this arises because of strong overlap of initial extended and final confined electron states.
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Ryan et al. (1996) studied this question.
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