Changes in profiles of implanted impurities in siliconand associated microstructural changes as a result of high-power laser pulses have been studied using ion- scattering channeling and transmission electron microscopy. The results show a significant segregation in the form of precipitates at and away from the dislocations in the near-surface regions for impurities such as copper and iron in silicon which have very low equilibrium solubilities and equilibrium distribution coefficients.
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White et al. (1979) studied this question.