We use luminescence with femtosecond resolution to study the transfer of electrons from the GaAs layers to the AlAs layers in type-II GaAs/AlAs superlattices. Transfer times are measured to vary from 140 fs to 25 ps depending on superlattice parameters and on the temperature. The temperature dependence, the absence of resonance effects, and the comparison with theory evidence the predominance of phonon-assisted intervalley scattering and rules out the contribution of state mixing as a transfer mechanism.
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Deveaud et al. (1994) studied this question.
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