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Changes in film deposition procedure have permitted us to measure, for the first time, field-effect-induced current multiplication up to 104 in sputtered a-Si:H. The deduced Fermi-level state density of the order of 1×1017 eV−1 cm−3 agrees within small errors with analysis of capacitance measurements on codeposited samples.
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Weisfield et al. (1981) studied this question.
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