Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and Properties

Silicon nitride thin films have been deposited on silicon substrates by reacting and at 550°–1250°C. The effects of deposition temperature and of and concentrations on the deposition rate have been studied. The etch rate of the deposited films is shown to be a function of the deposition temperature. Electrical evaluation has shown the dielectric strength to be independent of contact area and film thickness and the dielectric constant to be in the range seven to eight. Surface charge plus surface state density values range from . Nonlinear I–V characteristics of the films have been observed. The deposited films are extremely effective diffusion masks for sodium.