Oxygen-doped, semi-insulating layers of (AlxGa1−x)yIn1−yP with x=0.4 were grown on GaAs using organometallic vapor phase epitaxy (OMVPE). Secondary-ion mass spectrometry measurements show that the oxygen incorporation is proportional to the flow rate of O2 into the OMVPE reactor. Two-terminal metal-insulator-semiconductor devices were fabricated and used to evaluate the electrical characteristics of the (AlxGa1−x)yIn1−yP. Traps into the (AlxGa1−x)yIn1−yP bulk behave like DX centers, and are believed to be related to residual Si contamination. Increasing the oxygen concentration in the (AlxGa1−x)yIn1−yP layer decreases the trap concentration by the formation of oxygen complexes with the Si atoms.
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McCalmont et al. (1992) studied this question.
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