GaAs MIS field effect transistors (FET) have been fabricated using silicon oxynitride (SixOyNz) as the gate insulator. These devices display very little hysteresis and exhibit effective mobilities in excess of 2000 cm2/V sec. This paper reports on both the characteristics of the dielectrics used and on the resulting devices.
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L. Messick (1976) studied this question.
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