Black Phosphorus N‐Type Field‐Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

High-performance black phosphorus n-type field-effect transistors are realized using Al adatoms as effective electron donors, which achieved a record high mobility of >1495 cm2 V−1 s−1 at 260 K. The electron mobility is corroborated to charged-impurity scattering at low temperature, whilst metallic-like conduction is observed at high gate bias with increased carrier density due to enhanced electron–phonon interactions at high temperature.