Silicide formation in multilayered thin films of chromium and amorphous silicon was investigated by differential scanning calorimetry (DSC). The DSC traces gave a large main peak that was associated with the growth of the silicide. The growth kinetics followed a linear rate law, with an activation energy of 2.6 eV and a pre-exponential factor of 7.5×107 m/s for the rate constant. An explosive silicide reaction, observed in other metal-silicon multilayered films, could not be induced in this system.
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Schlesinger et al. (1991) studied this question.
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